Abstract

Monolayer iron germanium telluride Fe3GeTe2, one of the typical two-dimensional ferromagnetic materials, hitherto, has only been studied by exfoliated micron-sized samples. We achieve high-quality wafer-scale growth of thin Fe3GeTe2 films by molecular beam epitaxy, greatly expanding the types of characterization tools employable and providing the possibility for its integration in devices like consumer electronics. Thickness-dependent transport measurements are used to characterize and probe for magnetic order. Ferromagnetic states exist in 1–10 layer thick Fe3GeTe2, with Curie temperatures ranging from ~75 K in one layer samples to above 175 K in ten layer samples. A single ferromagnetic phase with significant magnetic anisotropy is revealed for all layer numbers. We submit the capability of synthesizing, wafer-scale Fe3GeTe2 as an essential step towards its fulfillment in any applications involving magnetism, such as spintronics.

Highlights

  • The integration of magnetic materials into electronic and photonic devices has been taking place for decades[1,2,3]

  • Prospects of which are plentiful in device application, in replacing magnets in current applications, and in new structures, such as, in magnetic tunnel junctions and magnetic random access memories (MRAM)[5,6]

  • After processed as a device, the electronic properties of these 2D materials could be controlled via strain, doping, gating, as well as “stacking”[9] to reveal exotic states leading to an era of “van der Waals (vdW) materials by design”[10]

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Summary

Introduction

The integration of magnetic materials into electronic and photonic devices has been taking place for decades[1,2,3]. The discovery of graphene[7] inspired a new generation of materials known as van der Waals (vdW) materials with intrinsic 2D nature[8]. Exfoliated 2D flakes of CrI317, Fe3GeTe218, Cr2Ge2Te619, and others[20] have shown clear long-range magnetic order that are promising for applications involving properties such as aboveroom-temperature Curie temperature (TC) and antiferromagnetic interlayer exchange. The synthesis of many 2D magnetic materials still is all limited to micron-sized flakes[21], eliminating any production scale applications. We focus on the wafer-scale synthesis of the vdW layered ferromagnetic material Fe3GeTe2 (FGT), which has a TC above room temperature[18] and is one of the few 2D magnetic materials that show evidence of topological states[22,23]

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