Abstract
The use of AlGaN/GaN High Electron Mobility Transistor differential sensing diodes is shown to provide robust detection of 1% H2 in air at 25{degree sign}C.The active device in the differential pair is coated with 10 nm of Pt to enhance catalytic dissociation of molecular hydrogen, while the reference diode is coated with Ti/Au. The active diode in the pair shows an increase in forward current of several mA at a bias voltage of 2.5V when exposed to 1%H2 in air. The use of the differential pair removes false alarms due to ambient temperature variations. A wireless module is demonstrated to successfully detect hydrogen leakage.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
