Robust computational models of quantum transport in electronic devices

Abstract

A family of efficient quantum transport models for simulation of modern nanoscale devices is presented. These models are used for quantitative calculations of quantum currents in nanoscale electronic device within our device simulator software. Specifically, we used them to simulate the tunneling current through thin barrier in VCSEL, direct and reverse currents through the junction, Schottky contact, gate induced drain leakage (GIDL), etc. The models have been successfully implemented within the drift-diffusion approach of CFDRC-TCAD simulator. In particular, to take into account the tunneling current through the thin potential barrier, we introduced the concept of tunnel mobility. For the Schottky contact problem, in cases when quantum effects dominate, we have used a series of analytical approximations for different ranges of temperature, doping, and voltage. We performed a series of simulations to compare these fast and efficient models with published data, experimental measurements, and other sophisticated models, including Wigner function method, quantum Boltzmann transport models, and others.