Abstract

This brief presents a compact model to capture the major difference between high-voltage (HV) and low-voltage MOSFETs, i.e., the carrier velocity saturation effect in the drift region of HV MOSFETs. We discuss the numerical and behavioral issues that can arise in SPICE simulations with the existing current-dependent formulation in Berkeley-Short-Channel-IGFET model (BSIM) for HV transistors. We then demonstrate how a voltage-dependent formulation can mitigate them without losing simplicity and accuracy. We also validate the proposed model against experimental data of HV transistors.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call