Abstract
A microscopically rippled texture can develop on the surface of Si(001) homoepitaxial layers grown by molecular beam epitaxy (MBE) and vapour phase epitaxy (VPE), and does not appear to depend on layer impurities or defects. From its relationship with substrate misorientation, we conclude that the texture is a result of a step-flow growth, during which 〈110〉 step edges are stable in MBE, but 〈100〉 steps form in VPE.
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