Abstract
Racetrack memory (RM) has sparked enormous interest thanks to its outstanding potential for low-power, high-density and high-speed data storage. However, since it requires bi-directional domain wall (DW) shifting process for outputting data, the mainstream stripe-shaped concept certainly suffers from the data overflow issue. This geometrical restriction leads to increasing complexity of peripheral circuits or programming as well as undesirable reliability issue. In this work, we propose and study ring-shaped RM, which is based on an alternative mechanism, spin orbit torque (SOT) driven chiral DW motions. Micromagnetic simulations have been carried out to validate its functionality and exhibit its performance advantages. The current flowing through the heavy metal instead of ferromagnetic layer realizes the “end to end” circulation of storage data, which remains all the data in the device even if they are shifted. It blazes a promising path for application of RM in practical memory and logic.
Highlights
In aspects of density, speed and power consumption[19] proposed a ring structure with Domain walls (DWs) ratchets, which could be utilized for addressing the data overflow issue without any additional overhead
We develop and study a ring-shaped Racetrack memory (RM) based on SOT driven chiral DW motions
From the functional point of view, it is composed of three parts: write head for DW nucleation, read head for magnetization detection and nanowire for DW motions
Summary
In aspects of density, speed and power consumption[19] proposed a ring structure with DW ratchets, which could be utilized for addressing the data overflow issue without any additional overhead. It still relies on the manipulation of magnetic field and is difficult to realize large capacity and high density. Spin accumulation in ferromagnetic layer arises from an in-plane current applied to the underneath heavy-metal layer[20,21,22,23,24,25] This structure can achieve “end to end” data storage, allowing the data remaining in the nanowire even in the shifting process. This study will promote the development of RM towards commercialization and inspire more innovative memory and logic concepts
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