Abstract
Loaded and unloaded ring-oscillator circuits with an electrical and surface-normal 850 nm optical readout are fabricated using a hybrid 0.8 µm silicon-CMOS/GaAs-AlGaAs MQW process. Measurements of the oscillation frequency of these circuits show total capacitance associated with the flip-chip-bonded optical MQW modulators as low as 52 fF.
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