Abstract
This paper is about the suppression of the relative intensity noise (RIN) peak and phase noise of a diode pumped neodymium-doped lithium niobate (Nd:LiNbO/sub 3/) microchip laser. Relaxation oscillations result in about 15-20 dB noise peak above the flat noise at 350 kHz offset frequency. In case of high quality requirements this noise peak is significantly disturbing. In this paper a new approach is presented for the suppression of the RIN peak and phase noise in microchip lasers.
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