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Abstract
In this paper, analysis and optimization of surrounding channel nanowire (SCNW) tunnel field-effect transistor (TFET) has been discussed with the help of technology computer-aided design (TCAD) simulation. The SCNW TFET features an ultra-thin tunnel layer at source sidewall and shows a high on-current (ION). In spite of the high electrical performance, the SCNW TFET suffers from hump effect which deteriorates subthreshold swing (S). In order to solve the issue, an origin of hump effect is analyzed firstly. Based on the simulation, the transfer curve in SCNW TFET is decoupled into vertical- and lateral-BTBTs. In addition, the lateral-BTBT causes the hump effect due to low turn-on voltage (VON) and low ION. Therefore, the device design parameter is optimized to suppress the hump effect by adjusting thickness of the ultra-thin tunnel layer. Finally, we compared the electrical properties of the planar, nanowire and SCNW TFET. As a result, the optimized SCNW TFET shows better electrical performance compared with other TFETs.
Highlights
A reduction of power density in complementary metal-oxide-semiconductor (CMOS) technology becomes one of the major concerns as the CMOS devices have been scaled down [1], [2]
The device structure used in this work is similar to that in [16], except a lateral channel direction considering the compatibility with the state-of-the-art CMOS technology for a sub-5 nm-technology nodes [31] (Figure 1)
It is named as a surrounding channel nanowire (SCNW) tunnel field-effect transistor (TFET), since its intrinsic channel which is named as tunnel region surrounds conventional nanowire structure
Summary
A reduction of power density in complementary metal-oxide-semiconductor (CMOS) technology becomes one of the major concerns as the CMOS devices have been scaled down [1], [2]. There are several studies to address them with the help of narrow band gap materials [9,10,11], abrupt doping profile [12] and novel geometrical structures [13,14,15] Among these studies, many papers propose a TFET with an ultra-thin tunnel layer at source sidewall which enables band-to-band tunneling (BTBT) perpendicular to the channel direction (vertical-BTBT) [16,17,18,19,20,21,22,23]. The optimized structure is compared with the control devices
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