Rigorous hole band structure calculations of p-type δ-doping superlattices in silicon

Abstract

Self-consistent hole band structure calculations are performed for p-type δ-doped quantum wells and superlattices (SLs) in Si by solving the six-band Luttinger–Kohn effective mass equations, together with Poisson equation, in a plane-wave representation. Non-parabolicities due to couplings between heavy, light, and spin–orbit split bands are fully taken into consideration. Exchange and correlation effects within the multicomponent hole gas are included in the local density approximation. Results are presented for hole band structures, Fermi levels, and potentials for p-type δ-doping SLs, in which the acceptor sheet doping concentration and SL period were varied. Our results are compared with the available experimental data.