Abstract
Nanoscale side-contacted field effect diode (S-FED) has been introduced to realize high frequency and low power consumption in the realm of the logic gates. Two gates on the channel in S-FED structure make it possible to apply different work functions into the gates. Different gate work functions lead to unbalance carrier concentrations into the channel due to the band bending just beneath the gates. This condition complies with S-FED operation modes. Accurate investigations show drive current increases due to the appropriate carrier accumulation under the gates, therefore, using a single device with large drive current make it applicable to design high frequency and low power consumption logic circuit.
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