Abstract
The carrier dynamics of electroluminescent metal-oxide-semiconductor silicon tunneling diodes is rigorously modeled in this study. Various tunneling and recombination current densities are formulated without using the Maxwell-Boltzmann approximation for the carrier concentrations. This model satisfactorily explains the current-voltage characteristics in strong accumulation using a self-consistent formulation. It also relates light emission efficiency to the interface-state density and the bulk-trap density in a straightforward manner. The internal radiative recombination efficiency in the bulk Si substrate is estimated to be in tens of percents. The model also explains clearly the strongly influenced small-signal light-current response time with respect to the injection current density. It enables the small-signal method to be useful in extracting the parameters of the interface-state density and the bulk-trap density.
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