Rigorous analysis of image force barrier lowering in bounded geometries: application to semiconducting nanowires

Abstract

Bounded geometries introduce a fundamental problem in calculating the image force barrier lowering of metal-wrapped semiconductor systems. In bounded geometries, the derivation of the barrier lowering requires calculating the reference energy of the system, when the charge is at the geometry center. In the following, we formulate and rigorously solve this problem; this allows combining the image force electrostatic potential with the band diagram of the bounded geometry. The suggested approach is applied to spheres as well as cylinders. Furthermore, although the expressions governing cylindrical systems are complex and can only be evaluated numerically, we present analytical approximations for the solution, which allow easy implementation in calculated band diagrams. The results are further used to calculate the image force barrier lowering of metal-wrapped cylindrical nanowires; calculations show that although the image force potential is stronger than that of planar systems, taking the complete band-structure into account results in a weaker effect of barrier lowering. Moreover, when considering small diameter nanowires, we find that the electrostatic effects of the image force exceed the barrier region, and influence the electronic properties of the nanowire core. This study is of interest to the nanowire community, and in particular for the analysis of nanowire I−V measurements where wrapped or omega-shaped metallic contacts are used.