Abstract
A transmission-electron-microscope strong-beam technique is used to investigate the rigid-body translation across {110} antiphase boundaries in GaAs. The results show a translation in the 〈001〉 direction parallel to the plane of the boundary. The magnitude of the translation is determined, and the antisite bond lengths are discussed in terms of the tetrahedral radii of Ga and As. Given this knowledge of the rigid-body translation, the absolute polarity of a GaAs grain can be determined immediately from a bright-field image of the {110} antiphase boundary.
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