RIE 공정 조건에 의한 피라미드 구조의 블랙 실리콘 형성

Abstract

In this study, pyramid structured black silicon process was developed in order to overcome disadvantages of using wet etching to texture the surface of single crystalline silicon and using grass/needle-like black silicon structure. In order to form the pyramidal black silicon structure on the silicon surface, the RIE system was modified to equip with metal-mesh on the top of head shower. The process conditions were : <TEX>$SF_6/O_2$</TEX> gas flow 15/15 sccm, RF power of 200 W, pressure at 50 mTorr ~ 200 mTorr, and temperature at <TEX>$5^{\circ}C$</TEX>. The pressure did not affect the pyramid structure significantly. Increasing processing time increased the size of the pyramid, however, the size remained constant at 1 <TEX>${\mu}M$</TEX> ~ 2 <TEX>${\mu}M$</TEX> between 15 minutes ~ 20 minutes of processing. Pyramid structure of 1 <TEX>${\mu}M$</TEX> in size showed to have the lowest reflectivity of 7 % ~ 10 %. Also, the pyramid structure black silicon is more appropriate than the grass/needle-like black silicon when creating solar cells.