Abstract
We fabricated a plasma texturing for multi-crystalline silicon cells using reactive ion etching (RIE). Multi-crystalline Si cells have not benefited from the cost-effective wet-chemical texturing processes that reduce front surface reflectance on single-crystal wafers. Elimination of plasma damage has been achieved while keeping front reflectance to extremely low levels. We will discuss reflectance, quantum efficiency and conversion efficiency for multi-crystalline Si solar cell by each RIE process conditions.
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