Abstract
Ridge Waveguide DFB lasers fabricated by single step liquid phase epitaxy are reported. The lasers obtained by overgrowth of a first order grating in an InP substrate and ridge waveguide fabrication show CW threshold currents of 35 mA and single facet efficiencies of 18% at 20°C. The overgrowth of more than one wafer from the same set of mother melts allows accurate matching of the Bragg wavelength to the active layer gain.
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