Abstract

AlAs growth by molecular-beam epitaxy has been successfully achieved on ⟨100⟩-aligned mesas on GaAs (001) patterned substrates. The final ridge morphology was found to be radically different from that observed from the homoepitaxial growth of GaAs on similar substrates. The significant modification to the final ridge profile is related to the reduction of the adatom diffusion length when using Al as the group-III species. These results provide direct evidence of a growth mode modification with alteration of the group-III element from Ga to Al and have significant implications for controlling the ridge formation process and for fabrication of more complex structures.

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