Abstract
A plasma dry etching technique has been applied to the fabrication of LiNbO 3 optical waveguide with a ridge structure for broadband operation. The etching characteristics of a LiNbO 3 single crystal have been investigated according to various ratios of Ar/C 3 F 8 gas mixture. A Ni metal was used as a dry etching mask. The effects of a gas mixture ratio on etching profile angle, sidewall roughness and etching rate were also studied. The etching surface roughness was evaluated by atomic force microscopy (AFM). The etch rate and profile was observed by scanning electron microscopy (SEM). The optimum etching conditions, considering etch rate, profile and surface roughness, were obtained at the 20 sccm C 3 F 8 gas flow.
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