Abstract
In this paper, the surface photovoltage of Rhodamine B is measured and 5800 Å laser pulse (10 28 photons cm −2 s −1) incident on the film produced a 2.02 microV photovoltage signal which decayed exponentially with a 9.01 msec relaxation time. The Rhodamine B surface had an accumulation space charge layer resulting from the presence of surface states which trap holes. Similar hole traps in the bulk are thought to account for the n-type conductivity of this organic semiconductor.
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