Abstract
AbstractSilicon wafers were prepared for MBE growth by chemical treatment and temperature annealing under UHV conditions. The (7 × 7) and (2 × 1) reconstruction of {111} and {100}‐oriented Si surfaces were obtained only after high temperature annealing for few minutes at 1200 °C. The reconstruction effects were found to be stable for a long time even if the pressure in the UHV chamber increased to 10−5 Pa.
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