Abstract
We use reflection high-energy electron diffraction (RHEED) oscillations to study the substrate temperature and In/Ga flux ratio dependencies of the growth of pseudomorphic InGaAs layers on GaAs. The growth of InGaAs on GaAs shows strongly damped oscillations which is dependent on the substrate temperature. The In mole fraction drops almost linearly with increasing substrate temperature above 580°C, with a dropping rate of 0.08–0.13%/°C which is dependent on In/Ga beam equivalent pressure (BEP) ratio. The In mole fraction drops almost linearly with decreasing substrate temperature below 500°C. The decrease below 500°C reported here is observed for the first time.
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