Abstract
Results of statistical analysis of the patterns of reflection high-energy electron diffraction (RHEED) measured during molecular beam epitaxy (MBE) of heterostructures of wide-bandgap (Al, Ga, In)N compounds are presented, which can be used for determining the lateral lattice constant (a) of the epitaxial layers. It is established that the error of determination can vary from a minimum of 0.17% up to several percent, depending on the contrast of RHEED patterns, which is determined by the stoichiometry of MBE growth. It is demonstrated that the RHEED data can reveal relaxation of elastic stresses during the growth of short-period {GaN(4 nm)/AlN(6nm)}30/AlN superlattices.
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