Abstract
Analyses of reflection high-energy electron diffraction (RHEED) intensity changes observed during initial stages of heteroepitaxial growth of calcium fluoride $({\mathrm{CaF}}_{2})$ on Si(111) are presented. Layers obtained by deposition of ${\mathrm{CaF}}_{2}$ on a hot (550 \ifmmode^\circ\else\textdegree\fi{}C) substrate demonstrate a high-quality crystallographic structure. The state of the surfaces of growing layers is studied with the in situ combination of RHEED azimuthal plots and rocking curve. The intensity of the reflected beam is calculated by solving the one-dimensional Schr\"odinger equation.
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