Abstract
The specular beam intensities of RHEED are calculated from vicinal Si(100) surfaces based on a multiple scattering theory for studying RHEED intensity oscillations during molecular beam epitaxial growth. In the series of RHEED rocking curves, two typical intensity variations related to the growth are found. One shows the variation by the change of the number of atoms on a terrace plane and the other by the change of atomic configuration on the surface. The results clearly show that the analysis based on a multiple scattering theory is necessary for interpreting the growth process and the structural change during the growth in terms of RHEED intensity and its oscillation.
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