Abstract
Epitaxial growth of TiN thin films on Si(001) using reactive crossed beam laser ablation has been investigated for substrate temperatures between 250 and 800°C. In situ RHEED analysis of the growing film has revealed two distinct interface growth regimes. Under about 550±50°C, TiN(001) grows epitaxially on Si(001) in a Volmer–Weber type 4-on-3 cube-on-cube mode and produces compressive biaxial stress in-plane, whereas at higher temperatures, the growth mode changes to a Stranski–Krastinov 5-on-4 cube-on-cube type with dilation of the strained interface layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.