Abstract
Epitaxial growth of TiN thin films on Si(001) using reactive crossed beam laser ablation has been investigated for substrate temperatures between 250 and 800°C. In situ RHEED analysis of the growing film has revealed two distinct interface growth regimes. Under about 550±50°C, TiN(001) grows epitaxially on Si(001) in a Volmer–Weber type 4-on-3 cube-on-cube mode and produces compressive biaxial stress in-plane, whereas at higher temperatures, the growth mode changes to a Stranski–Krastinov 5-on-4 cube-on-cube type with dilation of the strained interface layer.
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