Abstract
We successfully demonstrated fabrication of InN/InGaN multi quantum well (MQW) structures using a novel growth method by utilizing In droplet elimination by radical-beam irradiation (DERI). First, InGaN was grown under a metal rich (Ga+In>N*) condition by supplying Ga, In and N* simultaneously, in which In was preferentially swept out to the surface. Second, the swept In on the InGaN was transformed to InN by N* irradiation. Thus, by simply repeating these processes InN/InGaN MQW structure was fabricated. Three types of MQW structures were fabricated with different In beam flux. We found that thickness of In well layer can be controlled by changing the In beam flux during InGaN growth whereas In composition and thickness of the InGaN barrier layers were constant.
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