Abstract
In-situ X-ray fluorescence (XRF) analysis has been used to control the deposition process of Ti-N films on steel substrates during reactive sputtering. The analysis system consisted of a tungsten X-ray tube, secondary targets of Cu, Fe and Cr and a Si (Li) detector. The sputtering off the Ti target has been determined indirectly by plasma monitoring using optical emissions spetroscopy (OES) of the Ti atoms, and the film growth has been measured directly by XRF analysis of the surface mass of Ti atoms deposited on the substrate. For zero bias voltage and varying N2 flow the increment of surface mass per deposition time has been found to incrase linearly with the intensity of the OES signal of Ti. A negative bias voltage UB≥100 V changes strongly the growth rate by resputtering effects, especially in the range where stoichiometric TiN is formed.
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