Abstract
We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency. Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtainable for the distance of 8 cm between both antennas in spite of large mismatch in the resonant frequency between the diode and the connected antenna. Higher output voltage in volt range is expected to be achievable for the well-matching condition. The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector.
Highlights
In order to increase the performance of silicon (Si)-based ultra-large-scale-integrated circuits (ULSIs), miniaturization of complementary metal-oxide-semiconductor (CMOS) transistors is needed [1]
We reported the design, fabrication and characterization of individual n-AlGaAs/gallium arsenide (GaAs) high-electron-mobility-transistor (HEMT) Schottky diodes [15] and planar antennas [30,31] in order to understand the feasibility of direct integration of both components
We report the RF-to-DC characteristics of a Schottky diode where the diode and load are connected in parallel under direct injection of the RF signal
Summary
In order to increase the performance of silicon (Si)-based ultra-large-scale-integrated circuits (ULSIs), miniaturization of complementary metal-oxide-semiconductor (CMOS) transistors is needed [1]. 2.45 GHz rectenna with maximum conversion efficiency of 63% at a load resistance of 1.6 kΩ These reports have thoroughly discussed the results of integrated large-scale discrete diodes and antennas with the insertion of the matching circuits [24,25,26,27,28,29]. We reported the design, fabrication and characterization of individual n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) Schottky diodes [15] and planar antennas [30,31] in order to understand the feasibility of direct integration of both components. The rectifying characteristics of the Schottky diode where the signal is irradiated from different transmitting dipole antennas to the integrated dipole antenna are reported This experiment was conducted in order to understand the performance of the integrated devices for real practical applications. The results show the potential breakthrough for direct on-chip integration towards realization of low power rectenna devices for their advanced heterogeneous integration on a Si platform
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