Abstract
Polycrystalline Hg1−xCdxTe films were investigated for their potential as bottom cells of a CdTe-based tandem solar cell. The films were deposited by RF sputtering from a cold pressed target containing 30% HgTe + 70% CdTe. The as-deposited films were highly resistive with (111) preferred orientation and a bandgap of ∼1.0 eV. Various thermal treatment schemes were investigated under different conditions of ambient and temperature to reduce the resistivity. The film properties were analyzed using infrared transmission spectra, energy dispersive X-ray spectra and X-ray diffraction. N doped p-HgCdTe films were also prepared by reactive sputtering in a N2/Ar ambient. P-n junction solar cells were fabricated with CdS films as the heterojunction partner. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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