Abstract
We have proposed and fabricated AlGaN/GaN metal-oxide-semiconductor-high-electron-mobility transistors (MOS-HEMTs) on Si substrate employing RF-sputtered HfO2 gate insulator for a high breakdown voltage. The HfO2 sputtering conditions such as a sputtering power and working pressure have been optimized in order to improve reverse blocking characteristics. We obtained the high breakdown voltage of 1524 V, the low drain leakage current of 67 pA/mm when VDS= 100 V and VGS= –10 V, and on/off current ratio of 2.37×1010 at sputtering power of 50 W and working pressure of 3 mTorr. In addition, we also discussed the mechanism of breakdown voltage improvement and investigated HfO2/GaN interface in the proposed devices by measuring the leakage current, capacitance-voltage characteristics, and X-ray diffraction (XRD).
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