Abstract
We report the material and electrical properties of Erbium Oxide (Er2O3) thin films grown on n-Ge (100) by RF sputtering. The properties of the films are correlated with the processing conditions. The structural characterization reveals that the films annealed at 550ºC, has densified as compared to the as-grown ones. Fixed oxide charges and interface charges, both of the order of 1013/cm2 is observed.
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