Abstract
AZO films are grown using rf magnetron sputtering technique at different deposition time. Structural properties of AZO films are analysed using XRD and Raman technique. All the films are observed to be crystalline in nature with preferential growth towards (002) plane. Average crystallite size increases with subsequent increase in deposition time. Raman spectra analysis revealed the presence of B1 modes (B1Low, 2B1Low, B1High) which confirms the oxygen vacancies on ZnO sites along with E2HIGH mode indicating wurtzite crystal structure of the AZO film. Sheet resistance decreased from 2.4 Ω/□ to 0.2 Ω/□ and carrier concentration increased from 5.69 × 1020 to 1.5 × 1021 with increase in deposition time leading to increased film thickness. Optical transmittance of AZO films was 92% with the band gap 3.2 eV. Highest figure of merit (φ) for 1 hr. film is 2.02 × 10−2 Ω−1 which is close to ITO films.
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