Abstract
We have made Radio-Frequency Single-Electron Transistors (RF-SETs) with large input gates, and tested performance and modes of operation with the goal of using such devices as on-chip amplifiers for a variety of high impedance cryogenic photodetectors. We achieved /spl ap/100 kHz of closed-loop bandwidth for charge-locked-loop and transimpedance amplifier feedback configurations, and have combined amplifier outputs using a form of wavelength division multiplexing. With our choice of SET junction resistance, a 0.5 fF input gate capacitance gave a cotunneling-degraded charge noise of 1/spl times/10/sup -4/ e//spl radic/Hz, but a fairly low input voltage noise of 30 nV//spl radic/Hz.
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