Abstract
We report improvements in the growth and fabrication process of InP-based double heterojunction bipolar transistors (DHBTs) utilizing non-selective molecular beam epitaxy (MBE) regrown base-emitter junctions. This regrown emitter process produces a heterojunction bipolar transistor (HBT) structure with an emitter contact area much larger than the base-emitter junction, facilitating low emitter resistance even as deep submicron base-emitter junctions are used. In this report we present process development and regrowth surface preparation details relevant to emitter regrowth. improvements to the regrowth surface and its effect on large-area dc characteristics and small-area RF device results are presented.
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