Abstract
The most promising technologies of silicon nitride hydrogenated layers for application in solar cells are based on plasma-chemical methods. In this paper, results concerning radio-frequency plasma-enhanced chemical vapour deposition (RF PE CVD) method applied in the technology of a-Si x N y :H layers on glass and polycrystalline silicon are presented. For the purpose of this research the series of the samples have been deposited and subjected to optical and structural studies. The layers have been grown from silane and ammonia used as gaseous precursors. A special attention has been paid to the choice of a gas flow ratio [NH 3]/[SiH 4]. The results show that it has a significant influence on the atomic-level structure, chemical composition and optical properties of the layers.
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