Abstract
Three sets of different gate-length field-effect transistors (250, 120, and 50 nm) have been defined on homoepitaxial hydrogen-terminated diamond with the 50-nm device being the smallest gate length diamond transistor fabricated to date. DC- and small-signal RF measurements were undertaken to compare the operation of these gate nodes. RF small-signal equivalent circuits were generated to contrast individual components and better understand the operation at various gate dimensions. Scaling the gate length to smaller dimensions leads to an increase in the cutoff frequency of these devices although parasitic elements are found to dominate at the shortest gate length of 50 nm, limiting the outstanding potential of these devices.
Highlights
D IAMOND possesses several intrinsic material properties that would make it an ideal substrate for high-power RF electronic devices
Several different Lg hydrogen-terminated diamond field-effect transistors (FETs) have been reported on the same homoepitaxial diamond substrate
RF diamond FETs with sub-300-nm gate lengths have been discussed to see the limitations imposed from parasitic contributions and analysis of these through equivalent circuit extraction
Summary
D IAMOND possesses several intrinsic material properties that would make it an ideal substrate for high-power RF electronic devices. Its wide bandgap (5.47 eV), high intrinsic breakdown field (predicted to be >10 MV/cm), and high thermal conductivity (>20 W/cm · K) allow for high-power operation with suitable means to distribute heat away from devices [1]. High intrinsic electron and hole mobility (3800 and 4500 cm2/V · s, respectively) suggest the potential for high-frequency operation [2]. Doping of diamond has proved to be challenging . Conventional methods such as ion implantation and diffusion are yet to yield a substitutional dopant capable of high levels of carrier activation with reasonable mobility at room temperature. The highest cutoff frequency yet achieved for this technology of 53 GHz was recently demonstrated by Russell et al [10]
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