Abstract
We report on highly-scaled Al0.25Ga0.75N channel high electron mobility transistors. Regrown ohmic contacts covering the sidewall of the compressively strained Al0.25Ga0.75N channel exhibited a low contact resistance of R c = 0.23 Ω · mm. Scaled devices with a T-shaped gate showed record high speed for any AlGaN-based transistors, f T/f max = 67/166 GHz, while simultaneously achieving high average breakdown field exceeding 2 MV cm−1. The load-pull measurements performed at 10 GHz revealed a 20% peak power added efficiency with an output power density of 2 W mm−1, which is mainly limited by the RF dispersion.
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