Abstract
N-type large gate-width modulation-doped field-effect transistors (MODFETs) are fabricated on Si/SiGe modulation-doped heterostructure with fT and fmax of around 8 GHz and 20 GHz, respectively. These power devices demonstrate 15 to 16 dB power gain at 2 GHz, which make them suitable for low- and medium-power amplifiers for RF applications. We report here the RF modeling using small-signal equivalent circuit of these power devices. The extracted parameters are compared with prior work having similar gate length and the differences between this work and the previous one are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
