Abstract
Microwave switching devices based on the semiconductor-metal transition of VO2 thin films were developped on two types of substrates (C-plane sapphire and SiO2∕Si), and in both shunt and series configurations. Under thermal activation, the switches achieved up to 30–40dB average isolation of the radio-frequency (rf) signal on 500MHz–35GHz frequency band with weak insertion losses. These VO2-based switches can be electrically activated with commutation times less than 100ns, which make them promising candidates for realizing efficient and simple rf switches.
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