RF MEMS switch with double-clamp and wafer level package with through silicon vias for integration RF MEMS in applications 5G and internet of things

Abstract

Reducing the complexity of the architecture of radio-frequency systems and subsystems of 5G mobile networks and Internet of Things currently requires the presence of passive RF components with very high performance. Considering these requirements, the technology of radio-frequency microelectromechanical systems for the development of passive RF devices allows us to solve the corresponding tasks related to the requirements of 5G and Internet of Things, concerning passive components and building blocks. Packaging of radio-frequency microelectromechanical systems and other passive components is a delicate issue, especially in line with future application contexts such as 5G and the Internet of Things, in which operating frequencies are approaching millimeter waves. In fact, when working with radio-frequency signals, the package, in addition to protecting encapsulated devices, should also have as limited an impact on their electromagnetic characteristics and performance as possible. Therefore, the packaging design stage must be carried out with extreme care. In this study, the verification of the methodology for electromagnetic modeling of a packaging solution at the wafer-level using through silicon vias for redistributing an electrical signal from passive radio-frequency microelectromechanical devices in package to other radio-frequency devices is discussed using the example of the developed capacitive radio-frequency microelectromechanical switch with double-clamp.