RF MEMS Switch Using Silicon Cantilevers

Abstract

This paper introduces a new concept in RF MEMS switches intended for high RF power applications. The novel switch architecture employs electrothermal hydraulic microactuators to provide mechanical actuation and 3D out-of-plane silicon cantilevers that have both spring action and latching mechanism, to create an OFF-state gap separation distance of 200 μm between ohmic contacts. Having simple assembly, many of the inherent problems associated with the more traditional in-plane suspension bridge and cantilever beam type architectures can be overcome. A SPST switch has been investigated and its ON-state insertion loss and return loss are less than 0.5 dB and greater than 15 dB, respectively; while OFF-state isolation is better than 30 dB, up to 12 GHz.KeywordsOhmic ContactPhase Change MaterialReturn LossElectrostatic ActuationSilicon CantileverThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.