Abstract
Silicon dioxide and silicon nitride as well as other insulating materials are used in micro-electro-mechanical systems. However, their tendency for electrostatic charging diminishes the device reliability. The charging effect becomes significant when these devices are subjected to ionizing radiation. The irradiation induced charging depends on the nature of irradiation, the underlying metal layers and the metal-insulator interface properties. The sensitivity of RF micro-electromechanical systems to electromagnetic ionizing radiation is presented, taking into account the simulation of charge generation and the device structure.
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