Abstract

Si-rich SiO2 films have been produced by magnetron sputtering using a composite target. The magneto-optical properties in GdTbFe were successfully improved by using Si-rich SiO2 as a protective layer. In order to characterize the Si-rich SiO2 films and the interface in a Si-rich SiO2/GdTbFe structure, X-ray photoelectron spectroscopy (XPS) and Auger depth profiling were employed. Any excess Si in Si-rich SiO2 plays an important role in the improvement of the magneto-optical properties. It was revealed that Si-rich SiO2 comprised three components: elemental Si, SiO2 and SiO-like suboxide. The chemical shift of Si2p form the SiO2 component was measured with values of 3.25 eV. Auger and XPS measurements revealed that FeSi2 was formed at the interface. The FeSi2 layer works as a blocking layer against oxygen penetration.

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