RF Magnetron Sputtering Grown Cu2O Film Structural, Morphological, and Electrical Property Dependencies on Substrate Type.

Abstract

We investigated the structural, morphological, and electrical properties of cuprous oxide (Cu2O) film dependency on substrate type. Thin films grown using RF magnetron sputtering were characterized by scanning electron microscopy, X-ray diffraction (XRD), and Hall effect measurements. Cu2O thin films were deposited onto sapphire (0001), Si (100), and MgO (110) substrates, and showed Cu2O single phase only, which was confirmed by XRD measurement. Relatively larger compressive strain existed in Cu2O film grown on sapphire and Si, while a smaller tensile strain appeared in Cu2O film grown on MgO. Cu2O thin film crystallite sizes showed a linear dependence on strain. Moreover, film carrier concentration and mobility increased with increasing strain, while resistivity decreased with decreasing strain. Cu2O film strain due to induced strain opens the possibility of controlling structural and electrical properties in device applications.