Abstract
We fabricated thin film transistors (TFTs) using TiInZnO(TiIZO) thin films as active channel layer. The thin films of TiIZO were deposited at room temperature by RF-magnetron co-sputtering system from InZnO(IZO) and Ti targets. We examined the effects of titanium addition by X-ray diffraction, X-ray photoelectron spectroscopy and the electrical characteristics of the TFTs. The TiIZO TFTs were investigated according to the radio-frequency power applied to the Ti target. We found that the transistor on-off currents were greatly influenced by the composition of titanium addition, which suppressed the formation of oxygen vacancies, because of the stronger oxidation tendency of Ti relative to that of Zn or In. A optimized TiIZO TFT with rf power 40W of Ti target showed good performance with an on/off current ratio greater than , a field-effect mobility of 2.09 [], a threshold voltage of 2.2 [V] and a subthreshold swing of 0.492 [V/dec.].
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