RF GaN HEMT Sensors for Detection of Caustic Chemicals

Abstract

For future wireless sensor network applications, high-speed RF GaN HEMTs (high electron mobility transistor) are investigated for toxic industrial chemical detection, for the first time. RF GaN HEMTs with a Pt-based gate metal show reliable, repeatable, and distinctive responses toward Cl <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gas and HCl vapor at room temperature.