Rf CMOS Background

Abstract

The Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) (or just MOS) is widely used and presents many advantages over the bipolar transistors (BJT) in many applications. It requires less silicon area and its fabrication process is relatively simpler. It is possible to implement most analog and digital circuits using almost exclusively MOS transistors. All these properties allow packing a large number of devices in a single integrated circuit. Additionally, and most important, its operation requires less power, making it extremely suitable to RFID circuits. This chapter aims to provide background on MOS transistors, from its physical operation to modeling, including RF modeling. The basic knowledge is essential to analyze and to design RFID circuits implemented using CMOS transistors. The chapter also presents noise analysis which is essential to low voltage signal, as it is the case of RFID circuits.