Abstract
We have prepared niobium nitride by a thermal diffusion technique of nitrogen into bulk niobium at 800 °C. The resulting NbN layer has been characterized at both low and high frequencies. We obtained transition temperature Tc=11.5 K, ‘‘penetration depth’’ λ0=85 nm at 9 GHz, and surface resistance Rs evaluated at 5.5 K and 9 GHz of 2.8×10−5 Ω. Moreover, this high-frequency Rs measured for thermally diffused NbN is better than the Rs of Nb, and is comparable to the Rs of sputtered NbN. Our diffusion technique is well adapted to all kinds of shapes. In addition, improved diffusion conditions allow Tc as high as 16 K.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
