Abstract
A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity was obtained at frequencies up to 500 MHz. Ferroelectric Hf0.5Zr0.5O2 of 10 nm thickness has demonstrated a stable permittivity switching in the whole frequency range. A constant increase of the calculated dielectric loss is observed, which is shown to be an effect of electric field distribution on highly resistive titanium nitride (TiN) thin film electrodes. The C-V characteristics of a “butterfly” shape was also extracted, where the varactors exhibited a reduction of capacitance tunability from 18.6% at 10 MHz to 15.4% at 500 MHz.
Highlights
Academic Editors: Kevin Nadaud, Raphaël Renoud, Hartmut W
We have proposed the use of CMOS compatible devices in the BEoL, based on Hf0.5 Zr0.5 O2 (HZO) varactors in a parallel-plate MFM configuration [17,18], but due to the lack of experimental data at high frequencies, the dielectric relaxation was not considered
The HZO layer was capped with a 10 nm titanium nitride (TiN) electrode, deposited by physical vapor deposition (PVD)
Summary
Academic Editors: Kevin Nadaud, Raphaël Renoud, Hartmut W. CMOS compatible materials with extraordinary electrical properties (e.g., piezoelectric, ferroelectric, or multiferroic) are becoming very attractive in the upcoming technology areas, like neuromorphic computing, 5G, etc. An example of such CMOS compatible materials is ferroelectric hafnium oxide (HfO2 ) discovered by Boescke et al [1] It is considered as a very prospective candidate for nonvolatile memory devices [2] and neuromorphic computing [3,4,5]. It can be deposited by using atomic layer deposition (ALD), which makes it feasible to be included into large-scale industrial production. By using a simple reflectivity VNA technique, we were able to investigate the complex permittivity and the C-V characteristics of HZO in a frequency range of 10 MHz to 500 MHz
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